SKB15N60 E8151 Tech Spezifikatioune
Infineon Technologies - SKB15N60 E8151 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SKB15N60 E8151
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A | |
| Test Condition | 400V, 15A, 21Ohm, 15V | |
| Td (on / off) @ 25 ° C | 32ns/234ns | |
| Energie schalten | 570µJ | |
| Supplier Device Package | PG-TO263-3-2 | |
| Serie | - | |
| Reverse Recovery Time (trr) | 279 ns | |
| Power - Max | 139 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 76 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 62 A | |
| Aktuell - Sammler (Ic) (Max) | 31 A | |
| Basis Produktnummer | SKB15N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SKB15N60 E8151.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | SKB15N60 E8151 | SKB15N60 | SKB25-12 | SKB15/14A2 |
| Hiersteller | Infineon Technologies | Infineon Technologies | SEMIKRON | SEMIKRON |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | - |
| Aktuell - Sammler Pulséiert (Icm) | 62 A | 62 A | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Aktuell - Sammler (Ic) (Max) | 31 A | 31 A | - | - |
| Input Type | Standard | Standard | - | - |
| Basis Produktnummer | SKB15N | SKB15N | - | - |
| Test Condition | 400V, 15A, 21Ohm, 15V | 400V, 15A, 21Ohm, 15V | - | - |
| Energie schalten | 570µJ | 570µJ | - | - |
| Power - Max | 139 W | 139 W | - | - |
| Td (on / off) @ 25 ° C | 32ns/234ns | 32ns/234ns | - | - |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A | 2.4V @ 15V, 15A | - | - |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | - | - |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 279 ns | 279 ns | - | - |
| IGBT Type | NPT | NPT | - | - |
| Gate Charge | 76 nC | 76 nC | - | - |
| Package protegéieren | Tape & Reel (TR) | Bulk | - | - |
Eroflueden SKB15N60 E8151 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SKB15N60 E8151 - Infineon Technologies.
SKB25-12SEMIKRONIGBT ModuleSKB15/14A2SEMIKRONIGBT ModuleSKB15/16A2SEMIKRONIGBT ModuleSKB15N60 K15N60Cypress Semiconductor (Infineon Technologies)SKB15/20A2SEMIKROIGBT ModuleSKB25-16SEMIKRONIGBT ModuleSKB25/01SEMIKRONIGBT ModuleSKB15N60Infineon TechnologiesIGBT, 31A, 600V, N-CHANNELSKB15/14SEMIKRONIGBT ModuleSKB15N60HSCypress Semiconductor (Infineon Technologies)IGBT ModuleSKB160/16SEMIKRONIGBT ModuleSKB2/08SEMIKRONIGBT ModuleSKB2/04SEMIKRONIGBT ModuleSKB15/18A2SEMIKRONIGBT Module
SKB15/18Eupec (Infineon)IGBT ModuleSKB15/16IGBT ModuleSKB15/22A2SEMIKRONIGBT ModuleSKB2/02L5ASEMIKRONIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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